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High-pressure Raman scattering of CdO thin films grown by metal-organic vapor phase epitaxy

✍ Scribed by Oliva, R.; Ibáñez, J.; Artús, L.; Cuscó, R.; Zúñiga-Pérez, J.; Muñoz-Sanjosé, V.


Book ID
119996689
Publisher
American Institute of Physics
Year
2013
Tongue
English
Weight
863 KB
Volume
113
Category
Article
ISSN
0021-8979

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## Abstract Improvement of hexagonal InN film quality grown by metal‐organic vapor phase epitaxy has been challenged by changing the ambient‐gas pressure in 87–320 kPa (∼1–3 atm.). The growth temperature and the source‐gas supply ratio, the so‐called V/III ratio, were optimized at each ambient‐gas