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Raman Scattering inInxGa1-xAs/GaAsSuperlattices Grown by Molecular Beam Epitaxy

✍ Scribed by M. Constant; N. Matrullo; A. Lorriaux; L. Boussekey

Book ID
111989737
Publisher
John Wiley and Sons
Year
1996
Tongue
English
Weight
450 KB
Volume
27
Category
Article
ISSN
0377-0486

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πŸ“œ SIMILAR VOLUMES

Raman scattering in InxGa1βˆ’xAs/GaAs supe
Raman scattering in InxGa1βˆ’xAs/GaAs superlattices grown by molecular beam epitaxy
✍ M. Constant; N. Matrullo; A. Lorriaux; R. Fauquembergue; Y. Druelle; J. Di Persi πŸ“‚ Article πŸ“… 1993 πŸ› Elsevier Science 🌐 English βš– 395 KB

The pseudomorphic In x Ga 1 \_ x As/GaAs structures are of particular interest because of the high value of the In X Gal-x As electron mobility and the great conduction band offset leading to good electron confinement at the interface. Raman scattering experiments were carried out to measure the opt