Raman scattering of ZnSe grown by molecular beam epitaxy
β Scribed by K. Kumazaki; K. Imai
- Book ID
- 112977195
- Publisher
- Indian Academy of Sciences,Royal Society of Chemistry
- Year
- 1990
- Tongue
- English
- Weight
- 328 KB
- Volume
- 102
- Category
- Article
- ISSN
- 0253-4134
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π SIMILAR VOLUMES
By exploiting the desired properties of different materials, a heterostructure can be tailored to acquire optimal functionality for a specifi c device. Heterojunction formation in semiconductor nanowires (NWs) is crucial for many predicted applications in nanoscale optoelectronics. [1][2][3] Recentl
The pseudomorphic In x Ga 1 \_ x As/GaAs structures are of particular interest because of the high value of the In X Gal-x As electron mobility and the great conduction band offset leading to good electron confinement at the interface. Raman scattering experiments were carried out to measure the opt