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Raman characterization of hydrogen ion implanted silicon: “High-dose effect”?

✍ Scribed by Sergey V. Ovsyannikov; Vsevolod V. Shchennikov Jr; Vladimir V. Shchennikov; Yuri S. Ponosov; Irina V. Antonova; Sergey V. Smirnov

No coin nor oath required. For personal study only.

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