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Raman characterization of electronic properties of self-assembled GaN nanorods grown by plasma-assisted molecular-beam epitaxy

✍ Scribed by Wang, D.; Tin, C. -C.; Williams, J. R.; Park, M.; Park, Y. S.; Park, C. M.; Kang, T. W.; Yang, W. -C.

Book ID: 118055155
Publisher: American Institute of Physics
Year: 2005
Tongue: English
Weight: 429 KB
Volume: 87
Category: Article
ISSN: 0003-6951
DOI: 10.1063/1.2146066

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