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Raman characterization of boron-doped {111} homoepitaxial diamond layers

✍ Scribed by Mermoux, M.; Jomard, F.; Tavarès, C.; Omnès, F.; Bustarret, E.

Book ID
121397595
Publisher
Elsevier Science
Year
2006
Tongue
English
Weight
784 KB
Volume
15
Category
Article
ISSN
0925-9635

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## Abstract The crystallinity and built‐in strain of diamond epilayers grown by MPCVD with boron contents __n__~B~ varying from 2 × 10^20^ to 2 × 10^21^ cm^–3^ as evaluated by SIMS are assessed by HR‐XR Diffraction. Both ac transport and ac susceptibility measurements show that the critical concent