Electronic properties of boron-doped {111}-oriented homoepitaxial diamond layers
✍ Scribed by Tavares, C.; Omnès, F.; Pernot, J.; Bustarret, E.
- Book ID
- 123121906
- Publisher
- Elsevier Science
- Year
- 2006
- Tongue
- English
- Weight
- 260 KB
- Volume
- 15
- Category
- Article
- ISSN
- 0925-9635
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## Abstract The crystallinity and built‐in strain of diamond epilayers grown by MPCVD with boron contents __n__~B~ varying from 2 × 10^20^ to 2 × 10^21^ cm^–3^ as evaluated by SIMS are assessed by HR‐XR Diffraction. Both ac transport and ac susceptibility measurements show that the critical concent
Several kinds of (100) surfaces of homoepitaxial diamond films doped with boron are investigated. The valence band maximum at the surface and electronic affinity are measured using ultraviolet and X-ray photoelectron spectroscopies. In p-type doped films, resistivity measurements indicate that the b