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Characteristics of homoepitaxial heavily boron-doped diamond films from their Raman spectra

โœ Scribed by Pruvost, F.; Bustarret, E.; Deneuville, A.

Book ID
120058460
Publisher
Elsevier Science
Year
2000
Tongue
English
Weight
244 KB
Volume
9
Category
Article
ISSN
0925-9635

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Cathodoluminescence measurements on heav
Cathodoluminescence measurements on heavily boron doped homoepitaxial diamond films and their interfaces with their Ib substrates
โœ Baron, C. ;Deneuville, A. ;Wade, M. ;Jomard, F. ;Chevallier, J. ๐Ÿ“‚ Article ๐Ÿ“… 2006 ๐Ÿ› John Wiley and Sons ๐ŸŒ English โš– 233 KB

## Abstract Heavily boron doped 1.8 to 2.4 ยตm thick homoepitaxial diamond films with 1.5 ร— 10^21^ cm^โ€“3^ โ‰ค [B] โ‰ค 1.75 ร— 10^21^ cm^โ€“3^ have been deposited directly on their (100) Ib substrates at 830 ยฐC. Their cathodoluminescence spectra probe the controlled thicknesses from 0.28 to 2.8 ยตm, therefor