Sensitivity of Raman spectra excited at
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Ghodbane, S. ;Deneuville, A. ;Tromson, D. ;Bergonzo, P. ;Bustarret, E. ;Ballutau
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Article
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2006
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John Wiley and Sons
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English
β 305 KB
## Abstract About 20 ΞΌm thick films were deposited in the same run by MPCVD at 900 Β°C on Si substrates and then hydrogenated in situ during 30 min with a hydrogen plasma at the same temperature. Their surfaces were kept as prepared or more or less strongly oxidized by annealing at 600 Β°C under ambi