𝔖 Bobbio Scriptorium
✦   LIBER   ✦

Raman characterization and stress analysis of AlN:Er3+ epilayers grown on sapphire and silicon substrates

✍ Scribed by Kallel, T.; Dammak, M.; Wang, J.; Jadwisienczak, W.M.


Book ID
121834205
Publisher
Elsevier Science
Year
2014
Tongue
English
Weight
925 KB
Volume
187
Category
Article
ISSN
0921-5107

No coin nor oath required. For personal study only.


πŸ“œ SIMILAR VOLUMES


Infrared reflectance analysis of GaN epi
✍ Z.C. Feng; T.R. Yang; Y.T. Hou πŸ“‚ Article πŸ“… 2001 πŸ› Elsevier Science 🌐 English βš– 282 KB

Infrared reflectance (IR) of GaN grown on sapphire and silicon substrates has been studied both theoretically and experimentally. The theoretical calculation of the IR spectra is based on the transfer matrix method. The IR spectral characteristics influenced by several factors, such as film thicknes