✦ LIBER ✦

Radiation hardness of MOSFETs with N2O-nitrided gate oxides

✍ Scribed by Lo, G.Q.; Joshi, A.B.; Kwong, D.L.

No coin nor oath required. For personal study only.

📜 SIMILAR VOLUMES

Improvement in reliability of n-MOSFETs

✍ You-Lin Wu; Zhao-Yin Wu; Jenn-Gwo Hwu 📂 Article 📅 1995 🏛 Elsevier Science 🌐 English ⚖ 464 KB

Process dependency of radiation hardness

✍ Lu, W.-S.; Lin, K.-C.; Hwu, J.-G. 📂 Article 📅 1993 🏛 IEEE 🌐 English ⚖ 592 KB

Electrical characterization and simulati

✍ Z.J. Ma; P.T. Lai; Y.C. Cheng 📂 Article 📅 1992 🏛 Elsevier Science 🌐 English ⚖ 703 KB

Inversion layer mobility of MOSFETs with

✍ Schmidt, M.A.; Terry, F.L.; Mathur, B.P.; Senturia, S.D. 📂 Article 📅 1988 🏛 IEEE 🌐 English ⚖ 667 KB

IVB-2 Inversion layer mobility of MOSFET

✍ Schmidt, M.A.; Terry, F.L., Jr.; Mathur, B.P.; Senturia, S.D. 📂 Article 📅 1985 🏛 IEEE 🌐 English ⚖ 169 KB

Endurance of MOSFETs with rapid thermall

✍ Joshi, A.B.; Kwong, D.L. 📂 Article 📅 1991 🏛 IEEE 🌐 English ⚖ 274 KB