Electrical characterization and simulation of substrate current in n-MOSFETs with nitrided/reoxidized-nitrided oxides as gate dielectrics

✍ Scribed by Z.J. Ma; P.T. Lai; Y.C. Cheng

• Publisher: Elsevier Science
• Year: 1992
• Tongue: English
• Weight: 703 KB
• Volume: 35
• Category: Article
• ISSN: 0038-1101
• DOI: 10.1016/0038-1101(92)90079-r