Endurance of MOSFETs with rapid thermally reoxidized nitrided thin gate oxides to hot carrier-induced GIDL

✍ Scribed by Joshi, A.B.; Kwong, D.L.

• Book ID: 114534792
• Publisher: IEEE
• Year: 1991
• Tongue: English
• Weight: 274 KB
• Volume: 38
• Category: Article
• ISSN: 0018-9383
• DOI: 10.1109/16.158740