𝔖 Bobbio Scriptorium
✦   LIBER   ✦

Radiation defects introduced by MeV electrons in argon implanted MOS structures

✍ Scribed by S. Kaschieva; S. N. Dmitriev

Publisher
Springer
Year
2008
Tongue
English
Weight
251 KB
Volume
94
Category
Article
ISSN
1432-0630

No coin nor oath required. For personal study only.

πŸ“œ SIMILAR VOLUMES

Characteristics of the electron-emission
Characteristics of the electron-emission defects introduced in Si–SiO2 structures by MeV electron irradiation
✍ A.F. Zatsepin; S. Kaschieva; S.N. Dmitriev; E.A. Buntov πŸ“‚ Article πŸ“… 2008 πŸ› Elsevier Science 🌐 English βš– 216 KB

Defects induced by high-energy electrons in Si-SiO 2 structure have been studied by the optically stimulated electron emission (OSEE) method. Si-SiO 2 structures with oxide thickness of 100 nm are irradiated with 23 MeV electrons for different durations. It is shown that most of the defects created

Electrical characterization of defects i
Electrical characterization of defects induced by 12 MeV electrons in pβ€”type Si-SiO2 structures
✍ KG Stefanov; S Kaschieva; D Karpuzov πŸ“‚ Article πŸ“… 1998 πŸ› Elsevier Science 🌐 English βš– 213 KB

The effect of 12 MeV electron irradiation of p-type Si-SiO 2 structures is studied by Deep Level Transient Spectroscopy (DLTS) measurements. The DLTS spectra of non-irradiated samples exhibit one peak only corresponding to a deep level located in the forbidden gap at 0.56 eV above the valence band e