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Quaternary n-Al0.08In0.08Ga0.84N/p-Si-based solar cell

✍ Scribed by Alaa J. Ghazai; Wisam J. Aziz; H. Abu Hassan; Z. Hassan


Book ID
113915336
Publisher
Elsevier Science
Year
2012
Tongue
English
Weight
529 KB
Volume
51
Category
Article
ISSN
0749-6036

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Electron heating in Al0.15Ga0.85N/GaN he
✍ Li-Hung Lin; Kui-Ming Chen; Shiou-Shian Han; C.-T. Liang; Wen-Chang Hsueh; Kuang πŸ“‚ Article πŸ“… 2007 πŸ› Elsevier Science 🌐 English βš– 242 KB

The transport behaviors of two GaN/AlGaN two-dimensional electron systems (2DESs) grown on Si substrates were studied, and a SiN x treatment employed in sample fabrication enhanced the conductance of one of the 2DESs. We study the electron heating effect in the 2DESs experimentally, with resistances