Quantum transport andI–Vcharacteristics of quantum size field effect transistor

✍ Scribed by Y. Fu; M. Karlsteen; M. Willander; N. Collaert; K. De Meyer

• Book ID: 102618079
• Publisher: Elsevier Science
• Year: 1998
• Tongue: English
• Weight: 111 KB
• Volume: 24
• Category: Article
• ISSN: 0749-6036
• DOI: 10.1006/spmi.1998.0582

✦ Synopsis

Quantum electron transport is expected to occur in nanometer-size field effect transistors. We show that the amplitude of the transmitted wave equals 1 only when the electric field in the conducting channel is zero. By reducing the dimension of the quantum transport from bulk to a two-dimensional electron gas system, and further to a one-dimensional quantum wire, the current-bias relation is not affected while the gate control over the drain current weakens. Starting from the Poisson and Schrödinger equations, we have studied numerically the quantum wave transport through the conduction channel where scattering processes are neglected, the I -V characteristic of a typical heterojunction high electron mobility transistor shows a linear relationship between drain current and voltage at low drain bias, but the drain current decreases with increasing drain voltage at a high bias.