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Analysis of the performance of the quantum wire resonant tunneling field-effect transistor

✍ Scribed by Di Yang; Jacob B. Khurgin

Publisher
Elsevier Science
Year
2000
Tongue
English
Weight
198 KB
Volume
27
Category
Article
ISSN
0749-6036

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✦ Synopsis

We develop a theory of a resonant tunneling through a quantum wire placed in transverse electric field and show that transistor action can be caused via the electric-field-induced changes of the symmetry of electron wavefunctions. We evaluate the current-voltage characteristics, transconductance and speed of the proposed device and show how they can be further improved by means of bandgap engineering.

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