Quasi-two-dimensional simulation of dual
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F. Duhamel; J. C. De Jaeger; Y. Butel; M. Lefebvre; G. Salmer
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Article
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1998
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John Wiley and Sons
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English
β 322 KB
A quasi-two-dimensional model was performed for the analysis of dual-gate heterojunction field effect transistors. It constitutes a versatile tool for the understanding of transistor physical behavior and device optimization difficult to perform due to the large number of parameters to consider. The