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Quantitative determination of depth carrier profiles in ion-implanted Gallium Nitride

✍ Scribed by F. Iucolano; F. Giannazzo; F. Roccaforte; L. Romano; M.G. Grimaldi; V. Raineri

Book ID
103861931
Publisher
Elsevier Science
Year
2007
Tongue
English
Weight
388 KB
Volume
257
Category
Article
ISSN
0168-583X

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## Abstract Angle‐resolved signal ratio electron microbeam analysis (AR/SR/EMA) was applied for the determination of the centroid depth of the ion‐implanted depth profile of 100 keV 10^16^ cm^βˆ’2^ P in Si. The experiment is part of an investigation on the suitability of AR/SR/EMA for application in