Amorphous TiO x N y films of varying stoichiometry have been deposited on Si and Cu substrates using ionassisted deposition (IAD). The structure of the films and the effects of annealing in the 200-450 Β°C range have been examined. Secondary ion mass spectrometry (SIMS) has been used to investigate
Quantitative Depth Profiling of K-Doped Fullerene Films Using XPS and SIMS
β Scribed by Oswald, Steffen ;Janda, Pavel ;Dunsch, Lothar
- Publisher
- Springer-Verlag
- Year
- 2003
- Weight
- 174 KB
- Volume
- 141
- Category
- Article
- ISSN
- 0344-838X
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