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Quantitative analysis of Si/GexSi1–x/Si heterojunction bipolar transistors with linearly graded Ge profile

✍ Scribed by Li, G.; Neugroschel, A.; Sah, C.-T.


Book ID
121724586
Publisher
The Institution of Electrical Engineers
Year
1999
Tongue
English
Weight
403 KB
Volume
35
Category
Article
ISSN
0013-5194

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