Quantitative AES analysis of TiSi x (1.3 β€ x β€ 2.1) thin films deposited on silicon by co-sputtering in a magnetron system has been performed. The time variation of the surface composition during sputtering with Ar Y ions of 3 keV energy has been explained using a kinetic model that allows one to de
β¦ LIBER β¦
Quantitative AES analysis of Ti silicide and Co silicide films
β Scribed by W. D. Chen; H. Bender; W. Vandervorst; H. E. Maes
- Publisher
- John Wiley and Sons
- Year
- 1988
- Tongue
- English
- Weight
- 508 KB
- Volume
- 12
- Category
- Article
- ISSN
- 0142-2421
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## Abstract The application of the Tougaard algorthm for the calculation of the inelastic background of surface electron spectra to the investigation of titanium and cobalt silicides is disecussed. The differential inelastic scattering crossβsection is calculated based on optical or energy loss exp