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Quantitative AES analysis and preferential sputtering of titanium silicide thin films

✍ Scribed by Palacio, C.

Publisher: John Wiley and Sons
Year: 1999
Tongue: English
Weight: 98 KB
Volume: 27
Category: Article
ISSN: 0142-2421
DOI: 10.1002/(sici)1096-9918(199912)27:12<1092::aid-sia683>3.0.co;2-2

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✦ Synopsis

Quantitative AES analysis of TiSi x (1.3 ≤ x ≤ 2.1) thin films deposited on silicon by co-sputtering in a magnetron system has been performed. The time variation of the surface composition during sputtering with Ar Y ions of 3 keV energy has been explained using a kinetic model that allows one to determine the sputtering yield ratio for Ti and Si atoms in the alloy (sputtering corrections) as well as the thickness of the altered layer where the composition is changed by sputtering. In addition to that, both sensitivity factors and matrix corrections are taken into account in order to obtain the alloy composition. Quantitative results obtained using this procedure agree very well with Rutherford backscattering measurements for composition showing that silicon is sputtered preferentially.

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