Qbd− dependencies of ultrathin gate oxides on large area capacitors

✍ Scribed by G.M. Paulzen

• Book ID: 104306446
• Publisher: Elsevier Science
• Year: 1997
• Tongue: English
• Weight: 246 KB
• Volume: 36
• Category: Article
• ISSN: 0167-9317
• DOI: 10.1016/s0167-9317(97)00073-7

✦ Synopsis

In this paper a systematic study of the dependence of intrinsic Qbd distributions (gate injection) on oxide thickness (3.5 -5.Tnm), area (0.04 -12.25 mm 2) and current density (-0.3 to -250 mA/cm 2) is reported. The oxides were grown with a similar optimized diluted oxygen furnace process. An increased dependence of Qbd to area and current density is noticed as the oxide thickness decreases in the ultrathin region. A model is proposed in which initially created, electrical stress induced, local traps and a decreased total amount of additional traps to initiate breakdown account for the shown dependencies.