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[IEEE 1997 6th International Symposium on the Physical and Failure Analysis of Integrated Circuits - Singapore (21-25 July 1997)] Proceedings of the 1997 6th International Symposium on the Physical and Failure Analysis of Integrated Circuits - Low-field time dependent dielectric breakdown characterization of very large area gate oxide [CMOS]

✍ Scribed by Bahrami, M.; Fishbein, B.; Lindo, P.

Book ID: 126693008
Publisher: IEEE
Year: 1997
Weight: 431 KB
Category: Article
ISBN-13: 9780780339859
DOI: 10.1109/IPFA.1997.638188

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