Punchthrough limits in MOS devices

✍ Scribed by K.Y. Tong

• Book ID: 104157568
• Publisher: Elsevier Science
• Year: 1987
• Tongue: English
• Weight: 363 KB
• Volume: 18
• Category: Article
• ISSN: 0026-2692
• DOI: 10.1016/s0026-2692(87)80427-5

✦ Synopsis

A two-dimensional analytical model has been developed to predict the minimum channel length of a MOST when punchthrough just starts to occur. Our model shows the dependence of the minimum channel length on all device parameters and biasing voltages, and is verified by numerical simulation results. It can be applied to more flexible scaling of MOS devices using punchthrough as the fundamental limit. Our calculations for the minimum channel length compare favourably with reported process parameters.