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Punchthrough limits in conventional and graded-drain MOS devices

✍ Scribed by D. Simeonov; E. Goranova

Book ID: 103270822
Publisher: Elsevier Science
Year: 1991
Tongue: English
Weight: 298 KB
Volume: 22
Category: Article
ISSN: 0026-2692
DOI: 10.1016/0026-2692(91)90040-t

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