✦ LIBER ✦

On the punchthrough phenomenon in submicron MOS transistors

✍ Scribed by Kuan-Yu Fu; Tsang, Y.L.

No coin nor oath required. For personal study only.

📜 SIMILAR VOLUMES

Three-level charge pumping on submicroni

✍ J.L. Autran; F. Djahli; B. Balland; C. Plossu; L.M. Gaborieau 📂 Article 📅 1992 🏛 Elsevier Science 🌐 English ⚖ 386 KB

Influence of statistical dopant fluctuat

✍ T. Mikolajick; H. Ryssel 📂 Article 📅 1993 🏛 Elsevier Science 🌐 English ⚖ 274 KB

On the punchthrough characteristics of a

✍ Chuang, C.T.; Tang, D.D.-L.; Li, G.P.; Hackbarth, E. 📂 Article 📅 1987 🏛 IEEE 🌐 English ⚖ 788 KB

Analytical extraction method for submicr

✍ Karlsson, P.R.; Jeppson, K.O. 📂 Article 📅 1994 🏛 The Institution of Electrical Engineers 🌐 English ⚖ 391 KB

On the ‘excess white noise’ in MOS trans

✍ L.D. Yau; C.T. Sah 📂 Article 📅 1969 🏛 Elsevier Science 🌐 English ⚖ 637 KB

The effect of strain on MOS transistors

✍ A.P. Dorey; T.S. Maddern 📂 Article 📅 1969 🏛 Elsevier Science 🌐 English ⚖ 385 KB