Effects of microwave nitrogen plasma etching of gallium nitride epilayers grown on sapphire were studied. The samples were etched with different supplied power ranging from 400 up to 800 W. High resolution X-ray diffraction, atomic force microscopy and infrared reflectivity were used to characterize
โฆ LIBER โฆ
Pulsed microwave plasma etching of polymers in oxygen and nitrogen for microelectronic applications
โ Scribed by Lin, T.H.; Belser, M.; Tzeng, Y.
- Book ID
- 117862093
- Publisher
- IEEE
- Year
- 1988
- Tongue
- English
- Weight
- 614 KB
- Volume
- 16
- Category
- Article
- ISSN
- 0093-3813
- DOI
- 10.1109/27.16551
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