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Ion energy and anisotropy in microwave plasma etching of polymers

โœ Scribed by J.E. Heidenreich; J.R. Paraszczak; M. Moisan; G. Sauve


Publisher
Elsevier Science
Year
1986
Tongue
English
Weight
559 KB
Volume
5
Category
Article
ISSN
0167-9317

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Microwave Plasma Etching of GaN in Nitro
โœ Frayssinet, E. ;Prystawko, P. ;Leszczynski, M. ;Domagala, J. ;Knap, W. ;Robert, ๐Ÿ“‚ Article ๐Ÿ“… 2000 ๐Ÿ› John Wiley and Sons ๐ŸŒ English โš– 78 KB ๐Ÿ‘ 1 views

Effects of microwave nitrogen plasma etching of gallium nitride epilayers grown on sapphire were studied. The samples were etched with different supplied power ranging from 400 up to 800 W. High resolution X-ray diffraction, atomic force microscopy and infrared reflectivity were used to characterize