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Experimental study of anisotropy mechanisms during reactive ion etching of silicon in a SF6/C2Cl3F3 plasma

✍ Scribed by V.A. Yunkin; I.W. Rangelow; J.A. Schaefer; D. Fischer; E. Voges; S. Sloboshanin

No coin nor oath required. For personal study only.

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Reactive ion etching of PECVD silicon ni

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