๐”– Bobbio Scriptorium
โœฆ   LIBER   โœฆ

Pseudo-alloy behavior of InAs-GaAs strained-layer superlattices

โœ Scribed by P. Voisin; M. Voos; M.C. Tamargo; R.E. Nahory; A.Y. Cho

Publisher
Elsevier Science
Year
1986
Weight
48 KB
Volume
174
Category
Article
ISSN
0167-2584

No coin nor oath required. For personal study only.

๐Ÿ“œ SIMILAR VOLUMES

Growth of InAs/GaSb strained layer super
Growth of InAs/GaSb strained layer superlattices. I
โœ G.R. Booker; P.C. Klipstein; M. Lakrimi; S. Lyapin; N.J. Mason; R.J. Nicholas; T ๐Ÿ“‚ Article ๐Ÿ“… 1994 ๐Ÿ› Elsevier Science ๐ŸŒ English โš– 725 KB
Band discontinuity in GaAs/AlAs superlat
Band discontinuity in GaAs/AlAs superlattices with InAs strained insertion-layers
โœ T. Saito; Y. Hashimoto; T. Ikoma ๐Ÿ“‚ Article ๐Ÿ“… 1994 ๐Ÿ› Elsevier Science ๐ŸŒ English โš– 128 KB

We have theoretically investigated the valence-band discontinuity \(\left(\Delta E_{v}\right)\) at the (100) GaAs/AlAs interface with the InAs strained insertion-layer. The theoretical calculation is carried out by the self-consistent tight-binding method with the \(s p^{3} s^{*}\) basis in the \((\

InAs/GaAs short-period strained-layer su
InAs/GaAs short-period strained-layer superlattices grown on GaAs as spatial light modulators: uniformity measurements
โœ Man-Fang Huang; Elsa Garmire; Tom Hasenberg; Steffen Koehler ๐Ÿ“‚ Article ๐Ÿ“… 1997 ๐Ÿ› Elsevier Science ๐ŸŒ English โš– 339 KB

Optical properties of two-dimensional transmission-type spatial light modulators using InAs/ GaAs short-period strained-layer superlattices (SPSLSs) in quantum wells, which operate near 960 nm, are investigated. The absorption characteristics of the individual pixels across a #200 pixellated wafer,

Photoreflectance study of folded above-b
Photoreflectance study of folded above-barrier states in (InAs)1/(GaAs)m strained-layer superlattices
โœ Masaaki Nakayama; Takashi Fujita; Hitoshi Nishimura ๐Ÿ“‚ Article ๐Ÿ“… 1995 ๐Ÿ› Elsevier Science ๐ŸŒ English โš– 162 KB

We have performed a photoreflectance study of the above-barrier states in ( \(\mathrm{InAs})_{1} /(\mathrm{GaAs})_{m}\) strained-layer superlattices ( \(m=10\) and 30 monolayers) grown on a (001) GaAs substrate by molecular-beam epitaxy. We have clearly observed the optical transitions associated wi