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InAs/GaAs short-period strained-layer superlattices grown on GaAs as spatial light modulators: uniformity measurements

✍ Scribed by Man-Fang Huang; Elsa Garmire; Tom Hasenberg; Steffen Koehler

Publisher: Elsevier Science
Year: 1997
Tongue: English
Weight: 339 KB
Volume: 21
Category: Article
ISSN: 0749-6036
DOI: 10.1006/spmi.1996.0164

No coin nor oath required. For personal study only.

✦ Synopsis

Optical properties of two-dimensional transmission-type spatial light modulators using InAs/ GaAs short-period strained-layer superlattices (SPSLSs) in quantum wells, which operate near 960 nm, are investigated. The absorption characteristics of the individual pixels across a #200 pixellated wafer, i.e. the uniformity of the devices, are analyzed. The limits to performance of this spatial light modulator due to nonuniformity are also discussed.

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