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Proton-induced defect generation at the Si-SiO/sub 2/ interface

✍ Scribed by Rashkeev, S.N.; Fleetwood, D.M.; Schrimpf, R.D.; Pantelides, S.T.

No coin nor oath required. For personal study only.

📜 SIMILAR VOLUMES

General framework about defect creation

✍ Guerin, C.; Huard, V.; Bravaix, A. 📂 Article 📅 2009 🏛 American Institute of Physics 🌐 English ⚖ 789 KB

Individual defects at the Si:SiO 2 inter

✍ Kirton, M J; Uren, M J; Collins, S; Schulz, M; Karmann, A; Scheffer, K 📂 Article 📅 1989 🏛 Institute of Physics 🌐 English ⚖ 966 KB

Hole energy dependent interface trap gen

✍ D. Varghese; S. Mahapatra; M. Alam 📂 Article 📅 2005 🏛 IEEE 🌐 English ⚖ 133 KB

Excess silicon at the Si[sub 3]N[sub 4]/

✍ V. A. Gritsenko; I. P. Petrenko; S. N. Svitasheva; H. Wong 📂 Article 📅 1998 🏛 American Institute of Physics 🌐 English ⚖ 329 KB

Radiation induced defects on Si-SiO2inte

✍ I. Petr 📂 Article 📅 1985 🏛 Springer 🌐 English ⚖ 225 KB

Characteristic electronic defects at the

✍ Johnson, N. M. 📂 Article 📅 1983 🏛 American Institute of Physics 🌐 English ⚖ 444 KB