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Proton beam induced luminescence of silicon dioxide implanted with silicon

✍ Scribed by Grzegorz Gawlik; Jacek Jagielski; Anna Stonert; Renata Ratajczak

Publisher
Elsevier Science
Year
2009
Tongue
English
Weight
477 KB
Volume
267
Category
Article
ISSN
0168-583X

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The inΓ‘uence of high-energy Si' irradiation on carbon-implanted silicon at low temperature was studied. C' Ions of kinetic energy 25 keV were implanted into Si(100) at room temperature with a dose density of 1 Γ‚ 1017 ions cm-2 after amorphization of the surface region by Ge' implantation at 200 keV.