A peculiarity of ion beam induced epitaxial crystallization with low implantation energies applied to doped amorphous silicon layers

Solid phase epitaxial regrowth of amorph

Solid phase epitaxial regrowth of amorphous layers in silicon created by low energy phosphorus implantation: A medium energy ion scattering study

✍ S. Ruffell; I.V. Mitchell; P.J. Simpson 📂 Article 📅 2006 🏛 Elsevier Science 🌐 English ⚖ 210 KB

Medium energy ion scattering (MEIS) has been used to study the kinetics of solid phase epitaxial regrowth (SPEG) of ultrathin amorphous layers created by room temperature implantation of 5 keV energy phosphorus ions into Si(1 0 0). P ion fluences ranged from 5e14 cm À2 up to 1e16 cm À2 , the associa