𝔖 Bobbio Scriptorium
✦   LIBER   ✦

Properties of various ion-implanted sapphire substrates for GaN epilayers

✍ Scribed by Jhin, J. ;Lee, J. ;Byun, D. ;Lee, J. S. ;Lee, J. H. ;Kim, C. ;Lee, H. ;Moon, Y. ;Koh, E.


Book ID
105362745
Publisher
John Wiley and Sons
Year
2004
Tongue
English
Weight
87 KB
Volume
201
Category
Article
ISSN
0031-8965

No coin nor oath required. For personal study only.


πŸ“œ SIMILAR VOLUMES


First results of AlGaN/GaN HEMTs on sapp
✍ M. Werquin; N. Vellas; Y. Guhel; D. Ducatteau; B. Boudart; J. C. Pesant; Z. Boug πŸ“‚ Article πŸ“… 2005 πŸ› John Wiley and Sons 🌐 English βš– 226 KB

AlGaN/GaN HEMTs are realized on a sapphire substrate without a field plate for power applications at microwave frequencies using a new Ar Ο© ions implant-isolation technology. The first results obtained are very good in terms of device isolation.

Photoluminescence properties of ZnO thin
✍ Tu Anh Trinh; In Seok Hong; Hwa Ryun Lee; Yong Sub Cho πŸ“‚ Article πŸ“… 2009 πŸ› Elsevier Science 🌐 English βš– 388 KB

ZnO thin films on sapphire substrate were fabricated by ion implantation combined with thermal oxidation. A sapphire substrate was implanted with 50 keV zinc ions at 350 Β°C with a fluence of 1.5 Γ‚ 10 17 ions cm Γ€2 , then annealed in a tube furnace in oxygen ambient in 2 h at 650 Β°C. Photoluminescenc