AlGaN/GaN HEMTs are realized on a sapphire substrate without a field plate for power applications at microwave frequencies using a new Ar Ο© ions implant-isolation technology. The first results obtained are very good in terms of device isolation.
β¦ LIBER β¦
Properties of various ion-implanted sapphire substrates for GaN epilayers
β Scribed by Jhin, J. ;Lee, J. ;Byun, D. ;Lee, J. S. ;Lee, J. H. ;Kim, C. ;Lee, H. ;Moon, Y. ;Koh, E.
- Book ID
- 105362745
- Publisher
- John Wiley and Sons
- Year
- 2004
- Tongue
- English
- Weight
- 87 KB
- Volume
- 201
- Category
- Article
- ISSN
- 0031-8965
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