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The use of preliminary ion implantation and heating on the substrate for modifying TiN coating properties and TiN/substrate interface

✍ Scribed by I.A Solodukhin; V.V Khodasevich; V.V Uglov; M Brizuela; J.I Oñate

Book ID
108422899
Publisher
Elsevier Science
Year
2001
Tongue
English
Weight
113 KB
Volume
142-144
Category
Article
ISSN
0257-8972

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Tin oxide thin films were grown by atmospheric pressure chemical vapor deposition (APCVD) on glass substrates at temperatures of 400, 500 and 600 1C with various deposition times from 15 to 60 min with 15 min time intervals. A homemade horizontal reactor was used for deposition from SnCl 2 þ 2H 2 O