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Properties of the fluorine-implanted Si-SiO2 system

✍ Scribed by G.S. Virdi; C.M.S. Rauthan; B.C. Pathak; W.S. Khokle

Publisher
Elsevier Science
Year
1991
Tongue
English
Weight
359 KB
Volume
34
Category
Article
ISSN
0038-1101

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In microelectronics, during fabrication of ultrashallow p-n junctions boron is implanted in a silicon monocrystal. However, the subsequent rapid thermal annealing (RTA) causes anomalous fast diffusion (transient enhanced diffusion, TED) of the boron inwards in the crystal, hindering the formation of