Schottky devices were fabricated by thermal evaporation of indium on chemically synthesized polyaniline, poly(o-anisidine), and poly(aniline-co-ortho-anisidine) copolymer. Electrical characterization of each of these devices was carried out using current (I) -voltage (V ) and capacitance (C) -voltag
Properties of metal-polyaniline schottky barriers
β Scribed by Hemangi K. Chaudhari; Deepali S. Kelkar
- Publisher
- John Wiley and Sons
- Year
- 1996
- Tongue
- English
- Weight
- 303 KB
- Volume
- 61
- Category
- Article
- ISSN
- 0021-8995
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β¦ Synopsis
In the present paper we report studies on metal-polyaniline (PAn) Schottky junctions where PAn is doped with various dopants such as hydrochloric acid (HCl), formic acid (HCOOH), iodine (I2) and methylene blue (C1J-Il&3C1). The I-V characteristics for the different Schottky junctions have been reported. Electronic parameters such as Richardson constant, ideality factor, barrier height etc., have been calculated.
π SIMILAR VOLUMES
## Isochronal Studies of Ξ±-Si:H Crystallization and the Performance of it's Schottky Barriers Hydrogenated amorphous silicon films (Ξ±-Si:H) were crystallized employing a metal induced crystalline (MIC) technique. Structural changes during annealing these films at 300 0 C for different periods (0-3