Isochronal Studies of α-Si:H Crystallization and the Performance of it's Schottky Barriers

✍ Scribed by A.M. Al-Dhafiri

• Publisher: John Wiley and Sons
• Year: 2002
• Tongue: English
• Weight: 190 KB
• Volume: 37
• Category: Article
• ISSN: 0232-1300
• DOI: 10.1002/1521-4079(200204)37:4<370::aid-crat370>3.0.co;2-9

✦ Synopsis

Isochronal Studies of α-Si:H Crystallization and the Performance of it's Schottky Barriers

Hydrogenated amorphous silicon films (α-Si:H) were crystallized employing a metal induced crystalline (MIC) technique. Structural changes during annealing these films at 300 0 C for different periods (0-300minutes) were obtained by XRD. Al was used as a metal induced crystalline for α-Si:H produced by ultra high vacuum (UHV) plasma enhanced chemical vapor deposition (PECVD). XRD shows that crystallization of the interacted α-Si:H film underneath Al initiates at 300 0 C for 15 minutes. A complete crystallization was obtained after annealing for 60 minutes. A gold dot was evaporated onto α-Si:H films, which annealed for different periods to form Schottky barriers. Electrical properties of Au/α-Si:H were calculated such as the ideality factor, n, barrier height, Φ B , donor concentration, N D , and the diffusion voltage, V d , as a function of the annealing time of α-Si:H films. All these parameters were carried out through the current voltage characteristics (J-V) and the capacitance voltage measurements (C-V). The results were presented a discussed on the basis of XRD performance and the thermionic emission theory.