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A Transport Analysis of the BEEM Spectroscopy of Au/Si Schottky Barriers

✍ Scribed by U. Hohenester; P. Kocevar; P. de Andrés; F. Flores

Publisher
John Wiley and Sons
Year
1997
Tongue
English
Weight
139 KB
Volume
204
Category
Article
ISSN
0370-1972

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Two statistics are developed using the multiconfigurate character of the DX center to analyse donors in n-type Al x Ga 1--x As:Si. The first statistics is derived assuming that the conduction electrons arise exclusively from DX centers. The second statistics supposes the existence of shallow donors