✦ LIBER ✦

Multiconfigurate Character of the DX Center and Statistical Analysis of Transport Data in Si-Doped AlxGa1—xAs

✍ Scribed by A. Triki; H. Mejri; F. Rziga Ouaja; A. Selmi

Publisher: John Wiley and Sons
Year: 2001
Tongue: English
Weight: 96 KB
Volume: 227
Category: Article
ISSN: 0370-1972
DOI: 10.1002/1521-3951(200110)227:2<541::aid-pssb541>3.0.co;2-w

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✦ Synopsis

Two statistics are developed using the multiconfigurate character of the DX center to analyse donors in n-type Al x Ga 1--x As:Si. The first statistics is derived assuming that the conduction electrons arise exclusively from DX centers. The second statistics supposes the existence of shallow donors in addition to the deep DX center. Experimental Hall data, obtained in Al x Ga 1 À x As : Si grown by metalorganic chemical vapor deposition, are interpreted using these statistical calculations.