Analysis of Schottky Barrier Heights of Metal/SiC Contacts and Its Possible Application to High-Voltage Rectifying Devices

✍ Scribed by Itoh, A. ;Matsunami, H.

• Publisher: John Wiley and Sons
• Year: 1997
• Tongue: English
• Weight: 339 KB
• Volume: 162
• Category: Article
• ISSN: 0031-8965
• DOI: 10.1002/1521-396x(199707)162:1<389::aid-pssa389>3.0.co;2-x