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Properties of HfO2/ultrathin SiO2/Si structures and their comparison with Si MOS structures passivated in KCN solution

✍ Scribed by Pinčík, Emil; Kobayashi, Hikaru; Matsumoto, Taketoshi; Takahashi, Masao; Mikula, Milan; Brunner, Róbert

No coin nor oath required. For personal study only.

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