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Investigation of properties of the Si-SiO2 interface in MOS structures irradiated by fast electrons

✍ Scribed by Bogatyrev, Yu. V. ;Korshunov, F. P.

Publisher: John Wiley and Sons
Year: 1978
Tongue: English
Weight: 185 KB
Volume: 48
Category: Article
ISSN: 0031-8965
DOI: 10.1002/pssa.2210480251

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