Investigation of an Mo/SiO2 interface by electron-induced x-ray emission spectroscopy

✍ Scribed by Jonnard, P.; Bonnelle, C.; Bosseboeuf, A.; Danaie, K.; Beauprez, E.

• Publisher: John Wiley and Sons
• Year: 2000
• Tongue: English
• Weight: 89 KB
• Volume: 29
• Category: Article
• ISSN: 0142-2421
• DOI: 10.1002/(sici)1096-9918(200004)29:4<255::aid-sia736>3.0.co;2-d

✦ Synopsis

We have studied the solid/solid interface between Mo and SiO 2 films deposited, respectively, by magnetron d.c. sputtering and plasma-enhanced chemical vapour deposition (PECVD). The sample depth profile was characterized by SIMS. We used electron-induced x-ray emission spectroscopy to characterize the interface from the valence Si 3p and O 2p spectral densities, which are very sensitive to the physicochemical environment, and the Si 2p ! 1s transition, which is sensitive to the oxidation degree of the silicon atoms. By gradually decreasing the emissive thickness, which is a function of the primary electron energy, we have shown the presence of an interfacial compound 2-4 nm thick that is not seen by SIMS. We suggest that this compound is an Mo-Si-O mixed oxide in which the silicon atoms have an oxidation degree equal or close to that of silica.