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Manifestation of excess centers of electron-hole pair generation resulting from field and thermal stresses and their subsequent annihilation in dynamic current-voltage characteristics of Si-MOS structures with ultrathin oxide

✍ Scribed by E. I. Goldman; N. F. Kukharskaya; V. G. Narishkina; G. V. Chucheva


Book ID
111444980
Publisher
Springer
Year
2011
Tongue
English
Weight
217 KB
Volume
45
Category
Article
ISSN
1063-7826

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