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Electrical properties of Al-SiO2Si structure with plasmochemical insulator: Potential barrier heights and electron capture in SiO2

✍ Scribed by É. A. Skrypnik; A. N. Blagodarov; V. Ya. Kunin; I. V. Kochnev; V. D. Zhuravov; N. I. Bulan'kov


Book ID
112427408
Publisher
Springer
Year
1981
Tongue
English
Weight
522 KB
Volume
24
Category
Article
ISSN
1573-9228

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