We have processed full-size strip detectors on Czochralski grown silicon wafers with resistivity of about 1.2 kO cm. Wafers grown with Czochralski method intrinsically contain high concentrations of oxygen, and thus have potential for high radiation tolerance. Detectors and test diodes were irradiat
Processing of microstrip detectors on Czochralski grown high resistivity silicon substrates
✍ Scribed by J. Härkönen; E. Tuominen; E. Tuovinen; P. Mehtälä; K. Lassila-Perini; V. Ovchinnikov; P. Heikkilä; M. Yli-Koski; L. Palmu; S. Kallijärvi; H. Nikkilä; O. Anttila; T. Niinikoski; V. Eremin; A. Ivanov; E. Verbitskaya
- Publisher
- Elsevier Science
- Year
- 2003
- Tongue
- English
- Weight
- 223 KB
- Volume
- 514
- Category
- Article
- ISSN
- 0168-9002
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